Method for fabricating varactor diodes using ion implanation
US4876211A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1988 |
| Grant date | Oct 24, 1989 |
| Priority date | — |
| Expiry date | Aug 9, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/64
Abstract
A process for fabricating varactor diodes using ion implantation techniques is described herein. Three successive implanations of N-type ions into a GaAs semi-insulating substrate provide a deep N.sup.+ type conductivity layer about 2-3 microns below the front major surface with concentration of at least 2.times.10.sup.18 ions/cm.sup.3. A fourth implantation of N type ions forms an N type conductivity layer over the N.sup.+ layer. An implanation of P type ions forms the P type conductivity layer over the N type conducitivity layer. A single rapid thermal anneal is performed on the substrate to remove damage to the crystal structure and to electrically activate the implants. The basic doped layered semiconductor structure is thereby produced using ion implantation. This ion implantation process provides a method for fabricating monolithic diode devices reliably and in mass quantities, which can be integrated with other monolithic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.