Method of making programmable low impedance interconnect diode element
US4876220A · kind A · utility
445Cited by
16References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1987 |
| Grant date | Oct 24, 1989 |
| Priority date | — |
| Expiry date | Nov 13, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, covered by a layer of semiconductor material of a second conductivity type. A programmable read only memory array and a programmable logic array comprising a plurality of the above-described cells are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.