Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate
US4877641A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 31, 1988 |
| Grant date | Oct 31, 1989 |
| Priority date | — |
| Expiry date | May 31, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/402
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of: PA1 (a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which either a silicon nitride-type or silicon dioxide-type film is to be formed; PA1 (b) maintaining the temperature of said zone and said substrate from about 100.degree. C. to about 350.degree. C.; PA1 (c) maintaining the pressure in said zone from about 0.1 to about 5 Torr; and PA1 (d) passing said gas mixture into contact with said substrate while exciting said gas mixture with a plasma for a period of time sufficient to form a silicon nitride-type or silicon dioxide-type film on said substrate, wherein said plasma is excited by a RF power at about 10 to 500 Watts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.