Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate
US4877651A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 31, 1988 |
| Grant date | Oct 31, 1989 |
| Priority date | — |
| Expiry date | May 31, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/152
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A thermal CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of: PA0 (a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which either a silicon nitride-type or silicon dioxide-type film is to be formed; PA0 (b) maintaining the temperature of said zone and said substrate from about 450.degree. C. to about 900.degree. C.; PA0 (c) maintaining the pressure in said zone from about 0.1 to about 10 Torr; and PA0 (d) passing said gases into contact with said substrate for a period of time sufficient to form a silicon nitride-type or silicon dioxide-type film thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.