Single crystal films of cubic group II fluorides on semiconductor compounds
US4878956A · kind A · utility
0Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1989 |
| Grant date | Nov 7, 1989 |
| Priority date | — |
| Expiry date | Mar 9, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a moleuclar beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.