Method of making a monolithic interleaved LED/PIN photodetector array
US4879250A · kind A · utility
40Cited by
16References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 29, 1988 |
| Grant date | Nov 7, 1989 |
| Priority date | — |
| Expiry date | Sep 29, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/956
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interleaved arrays of photoelectronic devices are fabricated utilizing one-step epitaxial growth of all active layers and simple planar processing. Exemplary arrays include interleaved LED transmitters and PIN photodiode receivers that operate at the same wavelength on light that enters the PINs and exits the LEDs along opposite but parallel paths and interleaved arrays of LED transmitters that emit light at two different wavelengths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.