Semiconductor radiation detector
US4879466A · kind A · utility
25Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1988 |
| Grant date | Nov 7, 1989 |
| Priority date | — |
| Expiry date | Jan 29, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/29
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A structure of semiconductor radiation detector element having a p-n junction comprises a substrate layer including a radiation absorbing layer having a silicon equivalent thickness not smaller than 140 .mu.m and located adjacent to a depletion layer formed at the p-n junction. With the simplified structure, both the detection sensitivity and the energy compensating performance are enhanced significantly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.