Bipolar semiconductor device having a conductive recombination layer
US4881115A · kind A · utility
7Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1989 |
| Grant date | Nov 14, 1989 |
| Priority date | — |
| Expiry date | Feb 21, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a conductive recombination layer. The conductive recombination layer, comprised of doped polycrystalline material, doped polycrystalline material and tungsten silicide, or tungsten silicide, is disposed between two separate semiconductor substrates which are bonded together using a polished surface on the conductive recombination layer as one of the bonding interfaces. The conductive recombination layer recombines minority carriers and thereby increases the switching speed of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.