Charge transfer matrix type photodetector with integrated charge-filtering device
US4881249A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 1989 |
| Grant date | Nov 14, 1989 |
| Priority date | — |
| Expiry date | May 1, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/72
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A matrix photodetector includes, for example, at the bottom of the memory zone, an ancillary zone with a region having an implantation of a type opposite to that of the substrate, parallel to the transfer channels and followed by a region for the passage of the charges, located so as to be an extension of the tranfer channels, and surmounted by an ancillary gate capable of receiving low or high ancillary control signals to apply, to the passage region, low or high ancillary potential levels, which are respectively smaller, in terms of absolute value, than the levels of low or high potentials produced by the other gates, thus enabling a first filtering of the charges to be done before they are transferred into the read-out butter, in removing unwanted charges to an anti-blooming device, notably of the type with insulating zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.