Titanium phthalocyanine optical semiconductor material and electrophotographic plate using same
US4882427A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1989 |
| Grant date | Nov 21, 1989 |
| Priority date | — |
| Expiry date | Feb 17, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/0696
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
This invention provides an optical semiconductor material comprising: (1) a noncrystalline titanium phthalocyanine compound which does not show substantial X-ray diffraction peak in X-ray diffraction chart, (2) a pseudo-noncrystalline titanium phthalocyanine compound which shows broad X-ray diffraction peaks at Bragg angles of 6.9.degree., 15.5.degree., 23.4.degree. and 25.5.degree. measured by using CuK.alpha. beam and (3) an assembly of said noncrystalline titanium phthalocyanine compound and pseudo-noncrystalline titanium phthalocyanine compound. Further, this invention provides an electrophotographic plate comprising an electrically conductive substrate, and a charge-generating layer and charge-transferring layer on the electrically conductive substrate, characterized in that the charge-generating layer contains the above noncrystalline and/or pseudo-noncrystalline titanium phthalocyanine compound(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.