Semiconductor devices with at least one monoatomic layer of doping atoms

US4882609A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Erdmann F. Schubert · Hazlet, US
• Klaus Ploog · Stuttgart, DE
• Albrecht Fischer · Löchgau, DE
• Yoshiji Horikoshi · Akishima, JP

Key dates

• Filing date: Nov 14, 1985
• Grant date: Nov 21, 1989
• Expiry date: Nov 14, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3408
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is a field effect transistor in which case the Dirac-delta doped layer 13 extends between the source and drain zones (18, 19) respectively. The field effect transistor can be constructed either with a homogeneous structure or with a hetero structure or with a superlattice structure. The field effect transistors described herein have a high transconductance and are capable of operating at high current densities.