Quantum well heterostructure lasers with low current density threshold and higher T.sub.O values
US4882734A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1988 |
| Grant date | Nov 21, 1989 |
| Priority date | — |
| Expiry date | Mar 9, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A quantum well heterostructure laser has low current density threshold and high T.sub.O values and includes a plurality of contiguous semiconductor layers formed on a substrate wherein one or more the layers form an active region capable of quantization of electron states. The active region is confined by a pair of outer superlattice regions which provide optical confinement and low thermal resistance while preventing the development of antiwaveguiding properties. Many configurations are shown to demonstrate the many forms that the overall laser structure can take and, in particular, the nature of the outer or inner cladding regions of different superlattice geometries and forms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.