Method of producing thin film transistor
US4883766A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 10, 1988 |
| Grant date | Nov 28, 1989 |
| Priority date | — |
| Expiry date | Nov 10, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a thin film transistor comprises the steps of preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer, forming on the structure an interlayer insulator layer made of a silicon oxide hydrate (SiO.sub.x H.sub.y) having a predetermined composition, forming contact holes in the interlayer insulator layer, forming a wiring layer on the interlayer insulator layer, and carrying out a thermal process thereby diffusing hydrogen atoms within the interlayer insulator layer into at least the active layer and the diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.