Semiconductor diffusion type force sensing apparatus
US4884051A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1988 |
| Grant date | Nov 28, 1989 |
| Priority date | — |
| Expiry date | Jul 5, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/18
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor diffusion type force sensing apparatus includes a plate-like semiconductor substrate formed by a single crystal material, and a plurality of sensing elements each constituted by a substantially rectangular impurity-diffused region formed in the semiconductor substrate. The sensing elements have an electric resistance variable in accordance with a deformation thereof due to an external force exerted on the semiconductor substrate. The sensing elements are arranged in a direction in which a longitudinal direction of each of the sensing elements coincides with a crystal orientation of the semiconductor substrate having an external value of a longitudinal piezoresistance coefficient of the impurity-diffused region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.