Process for forming thin film of metal sulfides
US4885188A · kind A · utility
4Cited by
8References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1986 |
| Grant date | Dec 5, 1989 |
| Priority date | — |
| Expiry date | Aug 29, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/1275
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention is designed to form thin films of metal sulfides usable in various types of electronic devices with a simple process comprising forming a layer of an organometallic compound having at least one metal-sulfur or metal-oxygen bond in the molecule on a substrate by printing or other means and then thermally decomposing the formed organometallic compound layer in an inert gas which may or may not be mixed with hydrogen sulfide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.