Electrophotographic photosensitive sensor
US4885226A · kind A · utility
3Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1988 |
| Grant date | Dec 5, 1989 |
| Priority date | — |
| Expiry date | Sep 29, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08264
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photosensitive sensor comprises a blocking layer, a photoconductive layer and a surface layer made mainly of microcrystalline or amorphous silicon and/or germanium and formed on a conductive substrate. At least one of the layers including the blocking layer, the photoconductive layer or the surface layer includes a multilayer which includes a plurality of constituent thin layers having different optical energy band gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.