Semiconductor element

US4885620A · kind A · utility

Inventors

• Josef Kemmer · Oberschleißheim, DE
• Gerhard Lutz · Munich, DE

Key dates

• Filing date: Dec 24, 1985
• Grant date: Dec 5, 1989
• Expiry date: Dec 24, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/15

Abstract

A semiconductor element with a basic region, to which a bias voltage is applied from at least one boundary surface and which completely depletes the basic region of majority carriers and produces a potential minimum in the basic region for the majoity carriers, in which the latter are collected and moved. On at least one side of the potential minimum, the quantity, movement direction and/or speed of the minority carriers is controlled by the course of the potential minimum.