Thyristor with turn-off facility and overvoltage protection
US4885657A · kind A · utility
5Cited by
4References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 22, 1988 |
| Grant date | Dec 5, 1989 |
| Priority date | — |
| Expiry date | Dec 22, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/0824
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a thyristor with turn-off facility (AT) and overvoltage protection, the voltage limitation is achieved by a parallel-connected controllable resistor, in particular in the form of a J-FET (JF) which is driven by an overvoltage sensor (OS). The separation of sensor function and bypass function produce advantages for a simple and compact construction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.