Reactive ion etching apparatus
US4886565A · kind A · utility
19Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 1989 |
| Grant date | Dec 12, 1989 |
| Priority date | — |
| Expiry date | Feb 7, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A reactive ion etching apparatus used in the manufacturing process of semiconductor elements such as ICs and LSIs is herein disclosed. The material to be etched is supported by a chucking device disposed on a negative electrode and in this apparatus, a magnetic field parallel to the surface of the material to be etched is generated. The reactive ion etching is carried out while cooling the negative electrode to a temperature of not more than 0.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.