Monolithic temperature compensated voltage-reference diode and method for its manufacture
US4886762A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1989 |
| Grant date | Dec 12, 1989 |
| Priority date | — |
| Expiry date | Jul 3, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
Abstract
An improved monolithic, temperature compensated voltage- reference diode is realized by creating a tub of epitaxial semiconductor material in a substrate of opposite conductivity type and creating a voltage reference junction at a surface of the tub. The junction between the tub and the substrate forms the forward-biased, temperature compensating junction of the device. The dopant concentration is varied during growth of the epitaxial material to provide a relatively low resistivity at the voltage-reference junction and a higher resistivity at the temperature compensating junction. The method described offers significant improvement over prior methods of manufacturing such devices in the area of cost and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.