Process for making refractory metal silicide cap for protecting multi-layer polycide structure
US4886764A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 1989 |
| Grant date | Dec 12, 1989 |
| Priority date | — |
| Expiry date | May 25, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a capping layer over a titanium silicide layer includes forming a layer of polysilicon (16) over a gate-oxide layer (14). A layer of titanium (18) is then formed over the poly layer (16) followed by deposition of a composite layer of tantalum silicide (20). The structure is then patterned and subjected to an annealing process to form a titanium silicide layer (22) covered by the capping layer (20) of tantalum silicide. The tantalum silicide provides a much higher oxidation resistant layer with the underlying titanium silicide providing the desirable conductive properties needed for long runs of interconnects on a semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.