P-I-N photodetector having a burried junction
US4887138A · kind A · utility
2Cited by
10References
4Claims
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Assignee
Inventor
Key dates
| Filing date | Mar 23, 1988 |
| Grant date | Dec 12, 1989 |
| Priority date | — |
| Expiry date | Mar 23, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A P-I-N photodetector is fabricated having a first upper light transmitting n.sup.- InP layer overlaying a second light absorbing layer of n.sup.- GaInAs in turn overlaying a substrate of n+InP or N+GaAs, together with p+ ion implant zones formed within the first layer which completely penetrate the first layer and partially penetrate the second layer to form a buried junction within the second layer, the junction being exposed to ambient air. The implants are preferably formed by ion implantation of Be, Cd, Zn or Mg.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.