Topside substrate contact in a trenched semiconductor structure and method of fabrication
US4887144A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 1987 |
| Grant date | Dec 12, 1989 |
| Priority date | — |
| Expiry date | Feb 27, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a topside substrate contact in a trenched semiconductor structure. A trench (24, 26) is etched into a P- block of substrate (10) material. The trench (24, 26) is filled with silicon dioxide, and then the substrate material (10) circumscribed by the trench (24, 26) is removed to form a well. A subcollector (48) is implanted in the well of the P. substrate. Epi material (50) is grown in the well to the top of the silicon dioxide-filled trench. A device (59) is formed in the epi (50). Ohmic contacts (70) are formed on the topside of the substrate to the device (59) within the well, and to the P- substrate itself outside the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.