Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
US4888202A · kind A · utility
41Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1987 |
| Grant date | Dec 19, 1989 |
| Priority date | — |
| Expiry date | Jul 23, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/918
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.