Hydrolysis-induced vapor deposition of oxide films
US4888203A · kind A · utility
13Cited by
29References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1987 |
| Grant date | Dec 19, 1989 |
| Priority date | — |
| Expiry date | Nov 13, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Thin films (e.g. less than 100 nm thick) of a metal oxide material can be deposited on a variety of hydrophilic substrates by hydrolysis. Deposition is achieved by reacting a vapor of an appropriate metal-containing compound with water at or near the substrate's surface. The resulting deposited film can serve a variety of uses, for example, as a photo-resist in micro-electronics or in any area where protective films are useful, such as the passivation of ternary metal oxide superconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.