Photochemical deposition of high purity gold films
US4888204A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1988 |
| Grant date | Dec 19, 1989 |
| Priority date | — |
| Expiry date | Sep 12, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
High purity gold films are photochemically deposited on substrates from the gold containing compound (CH.sub.3).sub.2 Au[CH(COCF.sub.3).sub.2 ]. A vapor of the gold containing organometallic compound, possibly mixed with a carrier gas, is flowed over the surface of the substrate, which is at 0.degree. C. to 160.degree. C., and preferably at ambient temperature. Photodissociation is induced with ultraviolet light, inasmuch as the organometallic compound is strongly absorbing in the range of from about 300 to 340 nanometers. Substantially no organic fragments are deposited upon the surface, so that the deposited gold film is of high purity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.