Method of reduced stress recrystallization
US4888302A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 29, 1989 |
| Grant date | Dec 19, 1989 |
| Priority date | — |
| Expiry date | Mar 29, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/152
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A defect free monocrystalline layer of silicon on an insulator is produced by forming a thin layer of silicon dioxide on a monocrystalline silicon substrate, forming a thin layer of polycrystalline or amorphous silicon on the silicon dioxide layer and focussing two beams from lamps on the thin silicon layer to form a line image providing a melt zone surrounded by two narrow heated zones having temperatures lower than the melt zone and having a temperature differential of from 2.degree.-10.degree. C./mm decreasing form the melt zone while heating the substrate to a temperature below that of the zones heated by the lamps and scanning the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.