Method for photo annealing non-single crystalline semiconductor films
US4888305A · kind A · utility
126Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1989 |
| Grant date | Dec 19, 1989 |
| Priority date | — |
| Expiry date | Mar 9, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.