Photoconductive device and method of operating the same
US4888521A · kind A · utility
25Cited by
3References
46Claims
0Family size
Assignees
Inventors
- Kenkichi Tanioka
- Keiichi Shidara
- Tatsuro Kawamura
- Junichi Yamazaki
- Eikyuu Hiruma
- Kazuhisa Taketoshi
- Shiro Suzuki
- Takashi Yamashita
- Mitsuo Kosugi
- Yochizumi Ikeda
- Masaaki Aiba
- Tadaaki Hirai
- Yukio Takasaki
- Sachio Ishioka
- Tatsuo Makishima
- Kenji Sameshima
- Tsuyoshi Uda
- Naohiro Goto
- Yasuhiko Nonaka
- Eisuke Inoue
- Kazutaka Tsuji
- Hirofumi Ogawa
Key dates
| Filing date | Jul 2, 1987 |
| Grant date | Dec 19, 1989 |
| Priority date | — |
| Expiry date | Jul 2, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/456
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.