Method for polishing AlGaAs surfaces
US4889586A · kind A · utility
16Cited by
4References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 30, 1989 |
| Grant date | Dec 26, 1989 |
| Priority date | — |
| Expiry date | Mar 30, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention polishes the surface of a substrate or epitaxial layer of Al.sub.x Ga.sub.1-x As wherein 0<x<1.0 with a polishing liquid comprising an aqueous alkali hypochlorite solution or a mixture of said aqueous solution with an alkali carbonate, said liquid being regulated to a pH value ranging from 8.0 to 11.0, and further containing a powder such as SiO.sub.2 or a colloidal material such as colloidal silica having a fine particle size to afford a planar mirror-surface to said surface, thereby preventing wafer cracking or pattern flowing during patterning by photomasks and improving yields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.