Method of manufacturing a semiconductor device of the hetero-junction bipolar transistor type

US4889821A · kind A · utility

Assignee

• U.S. Philips Corporation · US

Inventors

• Daniel Selle · Brunoy, FR
• Philippe Boissenot · Paris, FR

Key dates

• Filing date: Dec 28, 1988
• Grant date: Dec 26, 1989
• Expiry date: Dec 28, 2008

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85

Abstract

A method of manufacturing a hetero-junction bipolar transistor especially of gallium arsenide comprising the formation of epitaxial layers superimposed to obtain a collector layer (1) of the n.sup.+ type, an emitter layer (3) of the n-type, the formation of localized implantations of the p.sup.+ type to obtain the base region (31, 30) or of the n.sup.+ type to form collector contact islands (20). This method also including the formation of base contacts B (70) having the dimensions B.sub.0 and located at a relative distance of E.sub.1, then covering the metallization (70) of pads (81) of silica (Si.sub.3 N.sub.4) having edges perpendicular to the plane of the layers on which bear spacers of silicon nitride (Si.sub.3 N.sub.4) (52) having dimensions h.sub.1 defining with a high precision the dimension E.sub.0 =B.sub.1 -2h of the emitter contact E and the distances between the different collector (90), base (70) and emitter (90) contacts C, B and E, respectively.