Zinc diffusion in the presence of cadmium into indium phosphide
US4889830A · kind A · utility
1Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1988 |
| Grant date | Dec 26, 1989 |
| Priority date | — |
| Expiry date | Sep 9, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Zinc is diffused into indium phosphide in the presence of cadmium to prevent degradation of the indium phosphide surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.