Manufacturing method for integrated resonator
US4890370A · kind A · utility
31Cited by
2References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1988 |
| Grant date | Jan 2, 1990 |
| Priority date | — |
| Expiry date | Oct 7, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for an integrated resonator is disclosed wherein a mass of O.sup.+ ions are implanted into a silicon monocrystal substrate from one side thereof, a buried SiO.sub.2 layer is formed by annealing the ion implanted substrate, an SiO.sub.2 layer is formed on the surface of the substrate by oxidizing it, at least one slit is formed on the SiO.sub.2 layer for etching a predetermined area of the silicon monocrystal layer sandwich between two SiO.sub.2 layers to form a cavity and, a piezo-electric resonator is formed on an area of the surfacial SiO.sub.2 layer corresponding to the cavity in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.