Method for re-using silicon base material of a metal insulator semiconductor (mis) inversion-layer solar cell
US4891325A · kind A · utility
13Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1988 |
| Grant date | Jan 2, 1990 |
| Priority date | — |
| Expiry date | Jul 14, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/98
Abstract
A method is proposed for re-using silicon base material of defective MIS inversion-layer solar cells, where at least MIS solar cell-specific layers are stripped off and replaced by corresponding new layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.