Patent · US Expired

Method for re-using silicon base material of a metal insulator semiconductor (mis) inversion-layer solar cell

US4891325A · kind A · utility

13Cited by
11References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 14, 1988
Grant dateJan 2, 1990
Priority date
Expiry dateJul 14, 2008

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/98

Abstract

A method is proposed for re-using silicon base material of defective MIS inversion-layer solar cells, where at least MIS solar cell-specific layers are stripped off and replaced by corresponding new layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.