Method for doping silicon wafers using Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 composition
US4891331A · kind A · utility
22Cited by
6References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 21, 1988 |
| Grant date | Jan 2, 1990 |
| Priority date | — |
| Expiry date | Jan 21, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A doping composition and method for doping a silicon wafer with phosphorous in which the composition contains (A) a high purity Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound having a mole ratio of P.sub.2 O.sub.5 /Al.sub.2 O.sub.3 of about 1/1 to 4/1: and (B) a vehicle for the Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound for application as a paste to provide a thin layer on the silicon wafer which is fired to provide an easily-removed powdery layer on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.