Polishing method
US4892612A · kind A · utility
14Cited by
1References
7Claims
0Family size
Inventor
Key dates
| Filing date | Oct 11, 1988 |
| Grant date | Jan 9, 1990 |
| Priority date | — |
| Expiry date | Oct 11, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process of polishing semiconductor materials such as silicon with a silica sol-amine combination is improved by selecting an alkanolamine as the amine. The alkanolamine can be added in higher proportions than the prior art suggests while maintaining a stable colloidal dispersion. The silica sol-alkanolamine combination can be diluted to extremely low silica contents while exhibiting a high pH and efficient polishing of silicon metal wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.