Method of and apparatus for forming a thin film
US4892751A · kind A · utility
35Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1987 |
| Grant date | Jan 9, 1990 |
| Priority date | — |
| Expiry date | Dec 14, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/483
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a thin film wherein a gas which contains an element used to constitute a desired thin film as at least a part of its constituent elements or a condensed solid layer of this gas is irradiated with a high output power laser beam to dissociate the gas or the solid layer of the gas and thereby locally produce a plasma, and a substrate is irradiated with reactive particles produced in the plasma, thereby obtaining a highly-pure high-quality thin film. Also disclosed is an apparatus for realizing this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.