Ion current generator system for thin film formation, ion implantation, etching and sputtering
US4893019A · kind A · utility
4Cited by
7References
77Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1988 |
| Grant date | Jan 9, 1990 |
| Priority date | — |
| Expiry date | Apr 26, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The ion current generator is employed for thin film formation, ion implantation, etching, sputtering or the like. A vaporizer supplies material atoms to a predetermined region, and then, the material atoms are excited to a Rydberg state by lasers supplied from laser oscillators. The material atoms thus excited are ionized by an electric field applied from electric field application means, to be lead to a predetermined direction. Accordingly, an ion current can be generated at a high efficiency and low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.