High density integration of semiconductor circuit
US4893174A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1988 |
| Grant date | Jan 9, 1990 |
| Priority date | — |
| Expiry date | Sep 2, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit is disclosed in which a plurality of semiconductor substrates are stacked in such a manner that an insulating board, provided with (1) structure, such as grooves, for transmitting a coolant so as to dissipate heat, and (2) an electrical interconnection member for electrically connecting adjacent semiconductor substrates, is sandwiched between semiconductor substrates. In order to attain the high-speed signal transmission between a semiconductor substrate and an insulating board, a signal current flows not only in a main surface of the semiconductor substrate but also in directions perpendicular to the main surface. The insulating board may be formed of an insulating silicon carbide plate which has a plurality of grooves filled with a metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.