Process for glow-discharge-activated reactive deposition of metal from a gas phase

US4894256A · kind A · utility

Assignee

• U.S. Philips Corporation · US

Inventors

• Georg Gartner · Aachen, DE
• Peter A. Janiel · Würselen, DE

Key dates

• Filing date: Oct 28, 1988
• Grant date: Jan 16, 1990
• Expiry date: Oct 28, 2008

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/08
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

PA1 1. Process for flow-discharge-activated reactive deposition of metal from a gas phase. PA1 2.1 For the reactive deposition of tubular metal bodies from a flowing gas phase which contains a metal halide, a glow discharge is generated between an inner electrode and an outer electrode, one of which is of tubular construction and serves as substrate. Under these circumstances, an unexpectedly low yield of the metal deposition is obtained in some cases. The novel process is intended to ensure a high metal deposition. PA1 2.2 The reactive deposition from the gas phase is carried out in the high plasma resistance range. A preferred technique for establishing the high plasma resistance is to adjust the absolute mass flow of the metal halide to at least 60 sccm. PA1 2.3 The novel process makes it possible to manufacture self-supporting thermionic cathodes and other self-supporting materials, layers and shaped bodies for high-temperature applications. PA1 3. FIG. 2 is a plot showing the variation of the voltage drop Upl between cathode and anode with the absolute metal-halide mass flow Q.sub.abs.