Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
US4894352A · kind A · utility
261Cited by
8References
40Claims
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Key dates
| Filing date | Oct 26, 1988 |
| Grant date | Jan 16, 1990 |
| Priority date | — |
| Expiry date | Oct 26, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a low-pressure reactor, the addition of nitrogen trifluoride to a gaseous organosilicon compound such as tetraethoxysilane (TEOS) or tetramethylcyclotetroxysilane (TMCTS) results in surprisingly enhanced silicon dioxide deposition rates. The oxide deposited using this process also has the capability of filling features having aspects ratios up to at least 1.0, and may exhibit low mobile ion concentrations. The process is also applicable for depositing other silicon-containing films such as polysilicon and silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.