Surface emitting type semiconductor laser
US4894835A · kind A · utility
28Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1988 |
| Grant date | Jan 16, 1990 |
| Priority date | — |
| Expiry date | Sep 27, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3428
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting laser diode having a two-dimensionally extended light emitting region is disclosed in which the light emitting region includes a plurality of stripe regions and gap regions each formed between adjacent stripe regions, the stripe regions are optically coupled with each other through the gap regions, and an even-order diffraction grating is formed in at least a part of the light emitting area. The laser diode having the above structure can emit a high-intensity, well-collimated laser beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.