High purity sputtering target material and method for preparing high purity sputtering target materials
US4895592A · kind A · utility
15Cited by
13References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1987 |
| Grant date | Jan 23, 1990 |
| Priority date | — |
| Expiry date | Dec 14, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22B9/006
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Sputtering targets and a method for preparing them by melting the components of a rare earth-transition metal alloy in an inert atmosphere in the inner section of a crucible assembly having inner and outer sections separating by thermally insulating material and cooling the melt in the inner section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.