Superluminescent diode
US4896195A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1988 |
| Grant date | Jan 23, 1990 |
| Priority date | — |
| Expiry date | Mar 14, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/042
Abstract
A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.