Semiconductor detector having integrated coupling capacitors and intergrated dc biasing structures

US4896201A · kind A · utility

Assignees

• Messerschmitt Bolkow Blohm GmbH · DE
• Gerhard Lutz · DE
• Peter Holl · DE
• Lothar Strueder · DE

Inventors

• Josef Kemmer · Oberschleißheim, DE
• Gerhard Lutz · Munich, DE
• Peter Holl · Tübingen, DE
• Lothar Strueder · Munich, DE

Key dates

• Filing date: May 3, 1988
• Grant date: Jan 23, 1990
• Expiry date: May 3, 2008

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A semiconductor radiation detector has an at least partially or even completely depleted base region of a first conductivity, to which a bias voltage is applied, and has at least one output or read-out electrode at which a signal is produced by the charge carriers generated by radiation incident on the detector. The read-out or output electrode includes a highly doped region of the first or a second conductivity, onto which an insulating layer and thereupon a conducting electrode layer are applied for outputting the generated or induced signals. The voltage application to the highly doped region of the read-out or output electrode is achieved through a high impedance through the base region of the detector, from at least one electrode of the same conductivity as that of the output or read-out electrode. Thus, it is simply possible to capacitively couple the detector to external circuitry even if these external circuits have a complex structure or arrangement.