Method of fabricating single-crystal substrates of silicon carbide
US4897149A · kind A · utility
26Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1986 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | Jun 10, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single-crystal substrate of silicon carbide comprising a single-crystal substrate member of a material other than .alpha.-SiC, and a single-crystal layer of .alpha.-SiC formed over the substrate member with a ground layer provided between the substrate member and the single-crystal layer, the ground layer comprising a single-crystal layer of nitride of AlN, GaN or Al.sub.x Ga.sub.1-x N (0<x<1) having a hexagonal crystal structure or a crystal layer of the same structure made of a mixture of SiC and at least one of the nitrides; and a method for fabricating the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.