Method of direct write desposition of a conductor on a semiconductor
US4897150A · kind A · utility
24Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1988 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | Jun 29, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/98
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of patterning a conductive interconnect on a semiconductor element is disclosed. A catalytic layer of, for example, amorphous silicon is deposited on a semiconductor element. The areas over which a conductive pattern is to be formed is activated by directing a focused laser beam onto the amorphous silicon to form crystallized silicon. The amorphous silicon is then etched away after which a conductive material such as a metal is deposited on the activated crystallized silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.