Method of processing siloxane-polyimides for electronic packaging applications
US4897153A · kind A · utility
34Cited by
4References
24Claims
0Family size
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Key dates
| Filing date | Apr 24, 1989 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | Apr 24, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a multilayer metallization pattern using siloxane polyimide dielectric layers comprises forming the first siloxane polyimide layer, laser etching holes in the first layer, plasma etching the first layer to be sure the holes are clean, then cleaning the surface of the first layer in an etchant for silicon oxide, after which the metallization layer is formed and patterned and a second siloxane polyimide layer is formed thereover with good adhesion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.