Process for the formation of a functional deposited film by way of microwave plasma CVD method
US4897281A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 1988 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | May 25, 2008 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2219/0894
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the present invention, there is provided an improved process for the formation of a deposited film by way of a microwave plasma CVD method, the improvement comprising monitoring an effective power of a microwave to be introduced into a reaction chamber, leading to a control means an output signal indicative of the effective power corresponding a plasma intensity, and automatically controlling the matching between the reaction chamber and the microwave to be introduced into the reaction chamber according to an output signal from the control means. According to the above process, even after a long discharge time has elapsed, the plasma intensity in the reaction chamber may be maintained constant, and the effective power of the microwave to be introduced into the reaction chamber may be therefore maintained constant. Because of this, it becomes possible to repeatedly and stably prepare a desired deposited film excelling in the uniformity of the thickness and that of the quality at a high deposition rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.