Process for forming a deposited film on each of a plurality of substrates by way of microwave plasma chemical vapor deposition method
US4897284A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1988 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | Mar 10, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08278
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improvement in the known MW-PCVD process for forming a deposited film on each of a plurality of cylindrical substrates being so arranged as to surround the discharging space in a substantially enclosed reaction space of a deposition chamber by the glow discharge of raw material gas to generate plasmas containing reactive gaseous materials causing the formation of said deposited film in the discharging space while rotating said plurality of substrates, which comprises providing a gas feed pipe provided with a plurality of gas liberation holes opening into the discharging space in every space between every two of the substrates so as to form an encircled discharging space and an open non-discharging space by said plurality of cylindrical substrates and a plurality of gas feed pipes and regulating the deposit thickness to be deposited per a rotation cycle of the substrate passing through the discharging space and the non-discharging space to a 1000 .ANG. or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.